A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons

Bani, L.; Alexopoulos, A.; Artuso, M.; Bachmair, F.; Bartosik, M.; Beck, H.; Bellini, V.; Belyaev, V.; Bentele, B.; Bes, A.; Brom, J. -M.; Bruzzi, M.; Chiodini, G.; Chren, D.; Cindro, V.; Claus, G.; Collot, J.; Cumalat, J.; Dabrowski, A.; D'Alessandro, R.; Dauvergne, D.; De Boer, W.; Dick, S.; Dorfer, C.; Dunser, M.; Eremin, V.; Forcolin, G.; Forneris, J.; Gallin-Martel, L.; Gallin-Martel, M. -L.; Gan, K. K.; Gastal, M.; Giroletti, C.; Goffe, M.; Goldstein, J.; Golubev, A.; Gorisek, A.; Grigoriev, E.; Grosse-Knetter, J.; Grummer, A.; Gui, B.; Guthoff, M.; Hiti, B.; Hits, D.; Hoeferkamp, M.; Hofmann, T.; Hosselet, J.; Hostachy, J. -Y.; Hugging, F.; Hutton, C.; Janssen, J.; Kagan, H.; Kanxheri, K.; Kasieczka, G.; Kass, R.; Kis, M.; Kramberger, G.; Kuleshov, S.; Lacoste, A.; Lagomarsino, S.; Lo Giudice, A.; Paz, I. L.; Lukosi, E.; Maazouzi, C.; Mandic, I.; Mathieu, C.; Menichelli, M.; Mikuz, M.; Morozzi, A.; Moss, J.; Mountain, R.; Oh, A.; Olivero, P.; Passeri, D.; Pernegger, H.; Perrino, R.; Piccini, M.; Picollo, F.; Pomorski, M.; Potenza, R.; Quadt, A.; Rarbi, F.; Re, A.; Reichmann, M.; Roe, S.; Becerra, D. A. S.; Scaringella, M.; Schaffner, D.; Schmidt, C. J.; Schnetzer, S.; Schioppa, E.; Sciortino, S.; Scorzoni, A.; Seidel, S.; Servoli, L.; Smith, D. S.; Sopko, B.; Sopko, V.; Spagnolo, S.; Spanier, S.; Stenson, K.; Stone, R.; Sutera, C.; Traeger, M.; Trischuk, W.; Truccato, M.; Tuve, C.; Velthuis, J.; Venturi, N.; Wagner, S.; Wallny, R.; Wang, J. C.; Weingarten, J.; Weiss, C.; Wengler, T.; Wermes, N.; Yamouni, M.; Zavrtanik, M.

doi:10.1088/1361-6463/ab37c6

We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 m pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to protons cm−2 and protons cm−2 respectively. We observe the sum of mean drift paths for electrons and holes for both poly-crystalline CVD diamond and single-crystalline CVD diamond decreases with irradiation fluence from its initial value according to a simple damage curve characterized by a damage constant for each irradiation energy and the irradiation fluence. We find for each irradiation energy the damage constant, for poly-crystalline CVD diamond to be the same within statistical errors as the damage constant for single-crystalline CVD diamond. We find the damage constant for diamond irradiated with 24 GeV protons to be and the damage constant for diamond irradiated with 800 MeV protons to be . Moreover, we observe the pulse height decreases with fluence for poly-crystalline CVD material and within statistical errors does not change with fluence for single-crystalline CVD material for both 24 GeV proton irradiation and 800 MeV proton irradiation. Finally, we have measured the uniformity of each sample as a function of fluence and observed that for poly-crystalline CVD diamond the samples become more uniform with fluence while for single-crystalline CVD diamond the uniformity does not change with fluence.