Several future high-energy physics facilities are currently being planned. The proposed projects include high energy e+e− circular and linear colliders, hadron colliders, and muon colliders, while the Electron–Ion Collider (EIC) is expected to construct at the Brookhaven National Laboratory in the future. Each proposal has its advantages and disadvantages in terms of readiness, cost, schedule, and physics reach, and each proposal requires the design and production of specific new detectors. This paper first presents the performances necessary for future silicon tracking systems at the various new facilities. Then it illustrates a few possibilities for the realization of such silicon trackers. The challenges posed by the future facilities require a new family of silicon detectors, where features such as impact ionization, radiation damage saturation, charge sharing, and analog read-out are exploited to meet these new demands.

LGAD designs for Future Particle Trackers

Arcidiacono R.;Borghi G.;Costa M.;Fausti F.;Ferrero M.;Siviero F.;Sola V.;Staiano A.;Tornago M.;Zhao Y.
2020-01-01

Abstract

Several future high-energy physics facilities are currently being planned. The proposed projects include high energy e+e− circular and linear colliders, hadron colliders, and muon colliders, while the Electron–Ion Collider (EIC) is expected to construct at the Brookhaven National Laboratory in the future. Each proposal has its advantages and disadvantages in terms of readiness, cost, schedule, and physics reach, and each proposal requires the design and production of specific new detectors. This paper first presents the performances necessary for future silicon tracking systems at the various new facilities. Then it illustrates a few possibilities for the realization of such silicon trackers. The challenges posed by the future facilities require a new family of silicon detectors, where features such as impact ionization, radiation damage saturation, charge sharing, and analog read-out are exploited to meet these new demands.
2020
979
164383
164383
Charge multiplication; Fast detector; LGAD; Low gain; Silicon
Cartiglia N.; Arcidiacono R.; Borghi G.; Boscardin M.; Costa M.; Galloway Z.; Fausti F.; Ferrero M.; Ficorella F.; Mandurrino M.; Mazza S.; Olave E.J.; Paternoster G.; Siviero F.; Sadrozinski H.F.-W.; Sola V.; Staiano A.; Seiden A.; Tornago M.; Zhao Y.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/1768911
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