This paper describes the electrodeposition of Europium-doped Zinc Oxide (ZnO) nanorods as well its application as photoanodes in dye sensitized solar cells (DSSCs). The incorporation of the Europium in the ZnO structure was evidenced by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The DSSCs based on Eu-doped nanorods photoanodes exhibits a higher conversion efficiency value (η) (0.50%) compared to the undoped photoanodes (0.34%). Mott-Schottky analysis was performed and this increase is assigned to the better electronic injection efficiency from the dye to the conduction band of Eu-doped ZnO nanorods, since the Europium incorporation in the ZnO matrix was able to down-shift its conduction band. The improvement on the DSSC performance was around 45%, showing the great potential from the practical point of view. To complement the experimental data, computational simulations were employed based on DFT framework, in order to carry out a detailed analysis of the electronic structures of these materials, as well as to provide an elucidation of its underlying physical mechanism at an atomic level.
A theoretical and experimental investigation of Eu-doped ZnO nanorods and its application on dye sensitized solar cells
Marana N. L.;
2018-01-01
Abstract
This paper describes the electrodeposition of Europium-doped Zinc Oxide (ZnO) nanorods as well its application as photoanodes in dye sensitized solar cells (DSSCs). The incorporation of the Europium in the ZnO structure was evidenced by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The DSSCs based on Eu-doped nanorods photoanodes exhibits a higher conversion efficiency value (η) (0.50%) compared to the undoped photoanodes (0.34%). Mott-Schottky analysis was performed and this increase is assigned to the better electronic injection efficiency from the dye to the conduction band of Eu-doped ZnO nanorods, since the Europium incorporation in the ZnO matrix was able to down-shift its conduction band. The improvement on the DSSC performance was around 45%, showing the great potential from the practical point of view. To complement the experimental data, computational simulations were employed based on DFT framework, in order to carry out a detailed analysis of the electronic structures of these materials, as well as to provide an elucidation of its underlying physical mechanism at an atomic level.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.