We developed monolithic active pixel detectors, by exploiting the triple well option available in a deep-submicron CMOS process. The novel features are the full analog signal processing and digital functionality implemented at the pixel level. The charge collecting element is realized using the deep N-well (DNW), the full in-pixel signal processing chain includes charge preamplifier, shaper, discriminator and latch. We report on the characterization of the two prototype chips, the first (APSEL0) containing single-channel sensors, with different collecting electrode area, and the latter (APSEL1) with several single pixel structures with improved noise figure implementing also an 8 x 8 matrix of 50 x 50 [mu]m2 pixel area. So far, the pixel matrix has a simple row by row readout, successfully tested with clock frequency up to 30 MHz. The response of the sensors to infra-red laser, [beta]-rays and soft X-rays (from radioactive sources, 90Sr and 55Fe respectively) will be presented. The results achieved so far demonstrate the viability of the technology and suggest new design improvements implemented in the next prototype chips submission (APSEL2).

Recent developments in 130 nm CMOS monolithic active pixel detectors

GAMBA, Diego;
2007-01-01

Abstract

We developed monolithic active pixel detectors, by exploiting the triple well option available in a deep-submicron CMOS process. The novel features are the full analog signal processing and digital functionality implemented at the pixel level. The charge collecting element is realized using the deep N-well (DNW), the full in-pixel signal processing chain includes charge preamplifier, shaper, discriminator and latch. We report on the characterization of the two prototype chips, the first (APSEL0) containing single-channel sensors, with different collecting electrode area, and the latter (APSEL1) with several single pixel structures with improved noise figure implementing also an 8 x 8 matrix of 50 x 50 [mu]m2 pixel area. So far, the pixel matrix has a simple row by row readout, successfully tested with clock frequency up to 30 MHz. The response of the sensors to infra-red laser, [beta]-rays and soft X-rays (from radioactive sources, 90Sr and 55Fe respectively) will be presented. The results achieved so far demonstrate the viability of the technology and suggest new design improvements implemented in the next prototype chips submission (APSEL2).
2007
172
20
24
G. Batignani; S. Bettarini; F. Bosi; G. Calderini; R. Cenci; M. Dell'Orso; F. Forti; P. Giannetti; M.A. Giorgi; A. Lusiani; G. Marchiori; F. Morsani; N. Neri; E. Paoloni; G. Rizzo; J. Walsh; L. Gaioni; M. Manghisoni; V. Re; G. Traversi; M. Bruschi; A. Gabrielli; B. Giacobbe; N. Semprini; R. Spighi; M. Villa; A. Zoccoli; G. Verzellesi; C. Andreoli; E. Pozzati; L. Ratti; V. Speziali; D. Gamba; G. Giraudo; P. Mereu; L. Bosisio; G. Giacomini; L. Lanceri; I. Rachevskaia; L. Vitale
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/50159
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact