A new version of classical IBIC technique is presented together with a comparison between IBIC and IBIl microscopy with the aim of obtaining maps of radiative recombination centers in technologically advanced materials. In same cases ( Si, CdTe ) the method is used to profile the electrical field in the bulk of the sample, in other cases ( GaAs, CVD diamond ) maps of charge collection length are obtained and compared with morphological and structural features. A model for the interpretation of both IBIC and IBIL maps and spectra is presented and qualitatively discussed. In our opinion, maps of the IBIL/IBIC ratio could be used in order to get maps of radiative recombination centers

IBIC and IBIL microscopy applied to advanced semiconductor materials

MANFREDOTTI, Claudio;VITTONE, Ettore;TRUCCATO, Marco;LO GIUDICE, Alessandro;
1998-01-01

Abstract

A new version of classical IBIC technique is presented together with a comparison between IBIC and IBIl microscopy with the aim of obtaining maps of radiative recombination centers in technologically advanced materials. In same cases ( Si, CdTe ) the method is used to profile the electrical field in the bulk of the sample, in other cases ( GaAs, CVD diamond ) maps of charge collection length are obtained and compared with morphological and structural features. A model for the interpretation of both IBIC and IBIL maps and spectra is presented and qualitatively discussed. In our opinion, maps of the IBIL/IBIC ratio could be used in order to get maps of radiative recombination centers
136-138
1333
1339
IBIC; IBIL; semiconductor
MANFREDOTTI C.; FIZZOTTI F.; POLESELLO P.; E. VITTONE; TRUCCATO M.; LOGIUDICE A.; JAKSIC M.; ROSSI P.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/105310
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