A new version of classical IBIC technique is presented together with a comparison between IBIC and IBIl microscopy with the aim of obtaining maps of radiative recombination centers in technologically advanced materials. In same cases ( Si, CdTe ) the method is used to profile the electrical field in the bulk of the sample, in other cases ( GaAs, CVD diamond ) maps of charge collection length are obtained and compared with morphological and structural features. A model for the interpretation of both IBIC and IBIL maps and spectra is presented and qualitatively discussed. In our opinion, maps of the IBIL/IBIC ratio could be used in order to get maps of radiative recombination centers
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