The pulse height response for He and H ions with energies between 1 and 6 MeV incident upon n-type 4H-SiC epitaxial Schottky diodes has been investigated. The average amount of energy, E, given up by the incident radiation to form electron-hole pair in this material was obtained by comparison with the average energy loss per pair in silicon detectors and it was found to be (7.78±0.05) eV at room temperature. This value is smaller than that foreseen by Klein’s semiempirical linear relationship between E and the semiconductor band gap.

Average energy dissipated by mega-electron-volt hydrogen and helium ions per electron-hole pair generation in 4H-SIC / ALESSANDRO LO GIUDICE; FRANCO FIZZOTTI; CLAUDIO MANFREDOTTI; ETTORE VITTONE; FILIPPO NAVA. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 87(2005), pp. 222105--.

Average energy dissipated by mega-electron-volt hydrogen and helium ions per electron-hole pair generation in 4H-SIC

LO GIUDICE, Alessandro;MANFREDOTTI, Claudio;VITTONE, Ettore;
2005

Abstract

The pulse height response for He and H ions with energies between 1 and 6 MeV incident upon n-type 4H-SiC epitaxial Schottky diodes has been investigated. The average amount of energy, E, given up by the incident radiation to form electron-hole pair in this material was obtained by comparison with the average energy loss per pair in silicon detectors and it was found to be (7.78±0.05) eV at room temperature. This value is smaller than that foreseen by Klein’s semiempirical linear relationship between E and the semiconductor band gap.
87
222105
-
www.dfs.unito.it/solid
4H-SiC; electron-hole pair; IBIC
ALESSANDRO LO GIUDICE; FRANCO FIZZOTTI; CLAUDIO MANFREDOTTI; ETTORE VITTONE; FILIPPO NAVA
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2318/10723
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