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EnglishThe pulse height response for He and H ions with energies between 1 and 6 MeV incident upon n-type 4H-SiC epitaxial Schottky diodes has been investigated. The average amount of energy, E, given up by the incident radiation to form electron-hole pair in this material was obtained by comparison with the average energy loss per pair in silicon detectors and it was found to be (7.78±0.05) eV at room temperature. This value is smaller than that foreseen by Klein’s semiempirical linear relationship between E and the semiconductor band gap.
| Titolo: | Average energy dissipated by mega-electron-volt hydrogen and helium ions per electron-hole pair generation in 4H-SIC |
| Autori Riconosciuti: | |
| Autori: | ALESSANDRO LO GIUDICE; FRANCO FIZZOTTI; CLAUDIO MANFREDOTTI; ETTORE VITTONE; FILIPPO NAVA |
| Data di pubblicazione: | 2005 |
| Abstract: | The pulse height response for He and H ions with energies between 1 and 6 MeV incident upon n-type 4H-SiC epitaxial Schottky diodes has been investigated. The average amount of energy, E, given up by the incident radiation to form electron-hole pair in this material was obtained by comparison with the average energy loss per pair in silicon detectors and it was found to be (7.78±0.05) eV at room temperature. This value is smaller than that foreseen by Klein’s semiempirical linear relationship between E and the semiconductor band gap. |
| Editore: | American Institute of Physics:2 Huntington Quadrangle, Suite 1NO1:Melville, NY 11747:(800)344-6902, (631)576-2287, EMAIL: subs@aip.org, INTERNET: http://www.aip.org, Fax: (516)349-9704 |
| Volume: | 87 |
| Pagina iniziale: | 222105 |
| Pagina finale: | - |
| URL: | www.dfs.unito.it/solid |
| Parole Chiave: | 4H-SiC; electron-hole pair; IBIC |
| Rivista: | APPLIED PHYSICS LETTERS |
| Appare nelle tipologie: | 03A-Articolo su Rivista |
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