Using the new ion beam-induced luminescence IBIL apparatus in National Legnaro Laboratories, Italy, a series of Ž . measurements concerning both wide-area luminescence spectra and monochromatic luminescence maps with a space resolution of a few m has been carried out on several CVD diamond and c-BN samples. Protons of 2 MeV with a penetration depth of approximately 25 m have been used in order to investigate the materials in the bulk. These measurements have been correlated with particle-induced X-ray emission PIXE and EPR data. The measurements have been performed at increasing proton doses Ž . in order to also investigate the radiation hardness of luminescence peaks. The results indicate that ionoluminescence of CVD diamond is dominated by three bands at approximately 2, 2.4 and 2.9 eV, with the intermediate band being very radiation-hard, and the other two radiation-weak. The band at 2 eV is correlated with N content, and is particularly high in samples with poor electronic properties. IBIL in c-BN is also dominated by three bands, one at approximately 2 eV, and the other two at higher energies with respect to CVD diamond. All these three bands seem to be relatively radiation-hard with respect to CVD diamond, and to be related to defects induced by doping.

Ionoluminescence in CVD diamond and in cubic boron nitride

MANFREDOTTI, Claudio;VITTONE, Ettore;LO GIUDICE, Alessandro;
2001-01-01

Abstract

Using the new ion beam-induced luminescence IBIL apparatus in National Legnaro Laboratories, Italy, a series of Ž . measurements concerning both wide-area luminescence spectra and monochromatic luminescence maps with a space resolution of a few m has been carried out on several CVD diamond and c-BN samples. Protons of 2 MeV with a penetration depth of approximately 25 m have been used in order to investigate the materials in the bulk. These measurements have been correlated with particle-induced X-ray emission PIXE and EPR data. The measurements have been performed at increasing proton doses Ž . in order to also investigate the radiation hardness of luminescence peaks. The results indicate that ionoluminescence of CVD diamond is dominated by three bands at approximately 2, 2.4 and 2.9 eV, with the intermediate band being very radiation-hard, and the other two radiation-weak. The band at 2 eV is correlated with N content, and is particularly high in samples with poor electronic properties. IBIL in c-BN is also dominated by three bands, one at approximately 2 eV, and the other two at higher energies with respect to CVD diamond. All these three bands seem to be relatively radiation-hard with respect to CVD diamond, and to be related to defects induced by doping.
10
568
573
Chemical vapor deposited CVD diamond, c-BN, Ionoluminescence, Radiation damage
MANFREDOTTI C; VITTONE E; A. LO GIUDICE; PAOLINI C; FIZZOTTI F; DINCA G; RALCHENKO V; NISTOR S.V
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/109146
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