The rate constants of the gas phase ion/molecule reactions in CH3GeH3 alone and in CH3GeH3/SiH4 mixture have been determined by ion trap mass spectrometry and compared with those obtained in GeH4 and CH3SiH3 alone, and in GeH4/SiH4 mixture. Collision rate constants have been calculated and efficiencies determined. Chain propagation of ions containing Ge, Si, and, possibly C, important in the radiolytical preparation of materials of interest in photovoltaic technology, occurs through ions such as GeSiCHn+ (n = 4, 6) from Si2Hn+ (n = 2, 4) reacting with methylgermane and GeSi2CHn+ (n = 6, 7) from Si3Hn+ (n = 4, 5) reacting with methylgermane at rather high rates. The experimental conditions to increase yield of formation of ions with silicon and germanium are discussed.
File in questo prodotto:
Non ci sono file associati a questo prodotto.