Photoluminescence characterization of silicon implanted gallium arsenide

GaAs technology for microwave devices (MESFET and MMIC) has received a significant improvement by ion implantation of silicon to form n-type active channel regions. Owing to amphoteric behaviour of silicon in GaAs, different activation of the implanted species can be obtained, depending on the post-implantation annealing treatment. In this paper we describe the results of the influence of rapid thermal annealing on implanted GaAs and using 4 K photoluminescence spectroscopy we identify the corresponding species (Si-As and Si-As-V-As complex) in silicon doped GaAs and explain the electrical behaviour of the implanted and annealed materia