GaAs technology for microwave devices (MESFET and MMIC) has received a significant improvement by ion implantation of silicon to form n-type active channel regions. Owing to amphoteric behaviour of silicon in GaAs, different activation of the implanted species can be obtained, depending on the post-implantation annealing treatment. In this paper we describe the results of the influence of rapid thermal annealing on implanted GaAs and using 4 K photoluminescence spectroscopy we identify the corresponding species (Si-As and Si-As-V-As complex) in silicon doped GaAs and explain the electrical behaviour of the implanted and annealed materia
Photoluminescence characterization of silicon implanted gallium arsenide
LAMBERTI, Carlo;
1996-01-01
Abstract
GaAs technology for microwave devices (MESFET and MMIC) has received a significant improvement by ion implantation of silicon to form n-type active channel regions. Owing to amphoteric behaviour of silicon in GaAs, different activation of the implanted species can be obtained, depending on the post-implantation annealing treatment. In this paper we describe the results of the influence of rapid thermal annealing on implanted GaAs and using 4 K photoluminescence spectroscopy we identify the corresponding species (Si-As and Si-As-V-As complex) in silicon doped GaAs and explain the electrical behaviour of the implanted and annealed materiaFile | Dimensione | Formato | |
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