The heat of adsorption and adsorbed amounts of H20(vap ) have been measured on an industrial crystalline Si3N 4 outgassed at 400 and 800 ~ C. A nearly uniform surface is present after the 400~ thermal treatment, where H20 is adsorbed via hydrogen bonding to surface OH and NH groups with a heat of adsorption of ~ 50kJ mo1-1 . After 800~ thermal treatment, which involves the dehydration and condensation of OH and NH groups, water is readily dissociated at the surface (-AH > 50kJ mol -~) and the pristine surface is formed on which water is hydrogen bonded again. No hydrophobic patches are detected. The results are discussed in comparison with SiO2 behaviour in similar conditions.

Reactivity induced by grinding in Silicon Nitride

FUBINI, Bice;GIAMELLO, Elio;
1989-01-01

Abstract

The heat of adsorption and adsorbed amounts of H20(vap ) have been measured on an industrial crystalline Si3N 4 outgassed at 400 and 800 ~ C. A nearly uniform surface is present after the 400~ thermal treatment, where H20 is adsorbed via hydrogen bonding to surface OH and NH groups with a heat of adsorption of ~ 50kJ mo1-1 . After 800~ thermal treatment, which involves the dehydration and condensation of OH and NH groups, water is readily dissociated at the surface (-AH > 50kJ mol -~) and the pristine surface is formed on which water is hydrogen bonded again. No hydrophobic patches are detected. The results are discussed in comparison with SiO2 behaviour in similar conditions.
1989
8
1076
1078
Materials science; Silicon Nitride
M. Volante; B. Fubini; E. Giamello; V. Bolis.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/114959
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