A kinetic model for the early stages of oxidation of an organic compound over irradiated semiconductors is presented. The model considers only the simpler cases, having the advantage of simplicity and of analytical solutions to the general differential equation. The obtained relationships are able to justify (i) the observed decays of C-i(t) versus time, (ii) the observed dependencies of the measured kinetic constants on initial substrate concentration, (iii) on the catalyst concentration, and (iv) on the light intensity.
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