Amorphous hydrogenated films of germanium carbides have been prepared by radiolysis of GeH4-C3H8 mixtures in the 430-570 K temperature range. Ge/C ratios range from 0.67 to 76 and Ge/H ratios from 0.22 to 10.8 according to the deposition temperature and the gas-phase composition. The corresponding bandgaps range from 1.58 to 1.04 eV. The effect of sp2 and sp3 carbon is discussed.
Thin film deposition of GexCyHz by radiolysis of GeH4-C3H8 mixtures
BENZI, Paola;CASTIGLIONI, Mario;VOLPE, Paolo Edoardo Angelo
1996-01-01
Abstract
Amorphous hydrogenated films of germanium carbides have been prepared by radiolysis of GeH4-C3H8 mixtures in the 430-570 K temperature range. Ge/C ratios range from 0.67 to 76 and Ge/H ratios from 0.22 to 10.8 according to the deposition temperature and the gas-phase composition. The corresponding bandgaps range from 1.58 to 1.04 eV. The effect of sp2 and sp3 carbon is discussed.
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