Amorphous hydrogenated films of germanium carbides have been prepared by radiolysis of GeH4-C3H8 mixtures in the 430-570 K temperature range. Ge/C ratios range from 0.67 to 76 and Ge/H ratios from 0.22 to 10.8 according to the deposition temperature and the gas-phase composition. The corresponding bandgaps range from 1.58 to 1.04 eV. The effect of sp2 and sp3 carbon is discussed.

Thin film deposition of GexCyHz by radiolysis of GeH4-C3H8 mixtures

BENZI, Paola;CASTIGLIONI, Mario;VOLPE, Paolo Edoardo Angelo
1996-01-01

Abstract

Amorphous hydrogenated films of germanium carbides have been prepared by radiolysis of GeH4-C3H8 mixtures in the 430-570 K temperature range. Ge/C ratios range from 0.67 to 76 and Ge/H ratios from 0.22 to 10.8 according to the deposition temperature and the gas-phase composition. The corresponding bandgaps range from 1.58 to 1.04 eV. The effect of sp2 and sp3 carbon is discussed.
6
1507
1509
Amorphous materials; germanium carbides; thin films
P. Benzi; M. Castiglioni; E. Truffa; P. Volpe
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/125464
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