A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

VITTONE, Ettore
2014-01-01

Abstract

A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.
104
192108-1
192108-5
http://www.dfs.unito.it/solid
AMORPHOUS-SILICON; POROUS-SILICON; Ion implantation; Radiation Damage
Z. Y. Dang;M. B. H. Breese;Y. Lin;E. S. Tok;E. Vittone
File in questo prodotto:
File Dimensione Formato  
Copertina-Enhanced electrochemical etching of ion irradiated silicon by localized amorphization_7a-versione-UniTo_4aperto (1).pdf

Accesso aperto

Tipo di file: PREPRINT (PRIMA BOZZA)
Dimensione 621.08 kB
Formato Adobe PDF
621.08 kB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/157044
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 3
social impact