We investigate the microscopic mechanism responsible for the change of macroscopic electrical properties of the Bi2Sr2CaCu2O8+δ high-temperature superconductor induced by intense synchrotron hard X-ray beams. The possible effects of secondary electrons on the oxygen content via the knock-on interaction are studied by Monte Carlo simulations. The change in the oxygen content expected from the knock-on model is computed convoluting the fluence of photogenerated electrons in the material with the Seitz-Koehler cross section. This approach has been adopted to analyze several experimental irradiation sessions with increasing X-ray fluences. A close comparison between the expected variations in oxygen content and the experimental results allows determining the irradiation regime in which the knock-on mechanism can satisfactorily explain the observed changes. Finally, we estimate the threshold displacement energy of loosely-bound oxygen atoms in this material Td =〖0.15〗_(-0.01)^(+0.025) eV.
Monte Carlo analysis of the oxygen knock-on effects induced by synchrotron X-ray radiation in the Bi2Sr2CaCu2O8+δ superconductor
Daniele Torsello;Lorenzo Mino;Valentina Bonino;Angelo Agostino;Lorenza Operti;Elisa Borfecchia;Ettore Vittone;Carlo Lamberti;Marco Truccato
2018-01-01
Abstract
We investigate the microscopic mechanism responsible for the change of macroscopic electrical properties of the Bi2Sr2CaCu2O8+δ high-temperature superconductor induced by intense synchrotron hard X-ray beams. The possible effects of secondary electrons on the oxygen content via the knock-on interaction are studied by Monte Carlo simulations. The change in the oxygen content expected from the knock-on model is computed convoluting the fluence of photogenerated electrons in the material with the Seitz-Koehler cross section. This approach has been adopted to analyze several experimental irradiation sessions with increasing X-ray fluences. A close comparison between the expected variations in oxygen content and the experimental results allows determining the irradiation regime in which the knock-on mechanism can satisfactorily explain the observed changes. Finally, we estimate the threshold displacement energy of loosely-bound oxygen atoms in this material Td =〖0.15〗_(-0.01)^(+0.025) eV.File | Dimensione | Formato | |
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