We investigate the microscopic mechanism responsible for the change of macroscopic electrical properties of the Bi2Sr2CaCu2O8+δ high-temperature superconductor induced by intense synchrotron hard X-ray beams. The possible effects of secondary electrons on the oxygen content via the knock-on interaction are studied by Monte Carlo simulations. The change in the oxygen content expected from the knock-on model is computed convoluting the fluence of photogenerated electrons in the material with the Seitz-Koehler cross section. This approach has been adopted to analyze several experimental irradiation sessions with increasing X-ray fluences. A close comparison between the expected variations in oxygen content and the experimental results allows determining the irradiation regime in which the knock-on mechanism can satisfactorily explain the observed changes. Finally, we estimate the threshold displacement energy of loosely-bound oxygen atoms in this material Td =〖0.15〗_(-0.01)^(+0.025) eV.

Monte Carlo analysis of the oxygen knock-on effects induced by synchrotron X-ray radiation in the Bi2Sr2CaCu2O8+δ superconductor

Daniele Torsello;Lorenzo Mino;Valentina Bonino;Angelo Agostino;Lorenza Operti;Elisa Borfecchia;Ettore Vittone;Carlo Lamberti;Marco Truccato
2018

Abstract

We investigate the microscopic mechanism responsible for the change of macroscopic electrical properties of the Bi2Sr2CaCu2O8+δ high-temperature superconductor induced by intense synchrotron hard X-ray beams. The possible effects of secondary electrons on the oxygen content via the knock-on interaction are studied by Monte Carlo simulations. The change in the oxygen content expected from the knock-on model is computed convoluting the fluence of photogenerated electrons in the material with the Seitz-Koehler cross section. This approach has been adopted to analyze several experimental irradiation sessions with increasing X-ray fluences. A close comparison between the expected variations in oxygen content and the experimental results allows determining the irradiation regime in which the knock-on mechanism can satisfactorily explain the observed changes. Finally, we estimate the threshold displacement energy of loosely-bound oxygen atoms in this material Td =〖0.15〗_(-0.01)^(+0.025) eV.
2
014801-1
014801-8
X-ray nanopatterning, Bi-2212, X-ray nanobeam, knock-on, oxygen doping, photoelectron, high-Tc superconductor
Daniele, Torsello; Lorenzo, Mino; Valentina, Bonino; Angelo, Agostino; Lorenza, Operti; Elisa, Borfecchia; Ettore, Vittone; Carlo, Lamberti; Marco, Truccato
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/1655946
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