Charge transfer crystals exhibit unique electronic and magnetic properties with interesting applications. The charge transfer single crystal formed by dibenzotetrathiafulvalene (DBTTF) together with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) presents a long-range ordered supramolecular structure of segregated stacks, with a unitary degree of charge transfer. Thus, the crystal structure is composed of dimerized radical molecules with unpaired electrons. The energy levels of this material and the spin degrees of freedom were investigated by solid state electrochemistry and electron paramagnetic resonance (EPR) spectroscopy. The electrochemical data, supported by density-functional theory (DFT) calculations, show how this organic Mott insulator has an electronic gap in the range of hundreds of meV. EPR experiments show the presence of a ground state S=1 triplet spin state along with localized S=½ spins. The calculations also predict a ground-state triplet configuration with the singlet configuration at 170 meV higher energy. DBTTF:F4TCNQ seems to be a candidate material for organic electronic and spintronic applications.
Spin Multiplicity and Solid-State Electrochemical Behavior in Charge-Transfer Co-crystals of DBTTF/F4TCNQ
Solano, Federica;Inaudi, Paolo;Chiesa, Mario;Salvadori, Enrico;Malandrino, Mery;Giacomino, Agnese;Fontanesi, Claudio
2021-01-01
Abstract
Charge transfer crystals exhibit unique electronic and magnetic properties with interesting applications. The charge transfer single crystal formed by dibenzotetrathiafulvalene (DBTTF) together with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) presents a long-range ordered supramolecular structure of segregated stacks, with a unitary degree of charge transfer. Thus, the crystal structure is composed of dimerized radical molecules with unpaired electrons. The energy levels of this material and the spin degrees of freedom were investigated by solid state electrochemistry and electron paramagnetic resonance (EPR) spectroscopy. The electrochemical data, supported by density-functional theory (DFT) calculations, show how this organic Mott insulator has an electronic gap in the range of hundreds of meV. EPR experiments show the presence of a ground state S=1 triplet spin state along with localized S=½ spins. The calculations also predict a ground-state triplet configuration with the singlet configuration at 170 meV higher energy. DBTTF:F4TCNQ seems to be a candidate material for organic electronic and spintronic applications.File | Dimensione | Formato | |
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2021_Solano et al_Spin multiplicity_DBTTF FTCNQ.pdf
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2021_Solano et al_Spin multiplicity_DBTTF FTCNQ_SI.pdf
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Solano et al, 2021_full_manuscript and supp mat.pdf
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