The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.

Experimental Study of Acceptor Removal in UFSD

Ferrero M.;Siviero F.;Sola V.;Tornago M.;
2020-01-01

Abstract

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.
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Acceptor Removal; Correlation C–V and charge collection; Low-gain Avalanche Detectors; Radiation damage; Ultra-Fast Silicon Detectors
Jin Y.; Ren H.; Christie S.; Galloway Z.; Gee C.; Labitan C.; Lockerby M.; Martinez-McKinney F.; Mazza S.M.; Padilla R.; Sadrozinski H.F.-W.; Schumm B.; Seiden A.; Wilder M.; Wyatt W.; Zhao Y.; Arcidiacono R.; Cartiglia N.; Ferrero M.; Mandurrino M.; Siviero F.; Sola V.; Tornago M.; Cindro V.; Howard A.; Kramberger G.; Mandic I.; Mikuz M.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/1849942
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