In this paper we present the numerical simulation of silicon detectors with internal gain as the main tool for 4-dimensional (4D) particle trackers design and optimization. The Low-Gain Avalanche Diode (LGAD) technology and its present limitations are reviewed with the aim of introducing the Resistive AC-Coupled Silicon Detectors (RSD) paradigm as a case study of our investigation. Authors here present Spice-like and 2D/3D Technological Computer-Aided Design (TCAD) simulations to characterize sensors in terms of both their electrostatic behavior, capacitive (dynamic) coupling and radiation-hardness performances, showing the methodological approach used in order to extract the set of layout rules allowing the release of RSD1, the incoming production run at Fondazione Bruno Kessler (FBK) of next-generation silicon detectors for 4D tracking with intrinsic 100% fill-factor.

Analysis and numerical design of Resistive AC-Coupled Silicon Detectors (RSD) for 4D particle tracking

Siviero F.;Sola V.;Vignati A.
2020

Abstract

In this paper we present the numerical simulation of silicon detectors with internal gain as the main tool for 4-dimensional (4D) particle trackers design and optimization. The Low-Gain Avalanche Diode (LGAD) technology and its present limitations are reviewed with the aim of introducing the Resistive AC-Coupled Silicon Detectors (RSD) paradigm as a case study of our investigation. Authors here present Spice-like and 2D/3D Technological Computer-Aided Design (TCAD) simulations to characterize sensors in terms of both their electrostatic behavior, capacitive (dynamic) coupling and radiation-hardness performances, showing the methodological approach used in order to extract the set of layout rules allowing the release of RSD1, the incoming production run at Fondazione Bruno Kessler (FBK) of next-generation silicon detectors for 4D tracking with intrinsic 100% fill-factor.
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Charge multiplication; Fast detectors; Particle timing detectors; Particle tracking detectors; Solid-state silicon detectors; TCAD modeling
Mandurrino M.; Arcidiacono R.; Boscardin M.; Cartiglia N.; Dalla Betta G.-F.; Ferrero M.; Ficorella F.; Pancheri L.; Paternoster G.; Siviero F.; Sola V.; Staiano A.; Vignati A.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/1849958
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