Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III-nitrides have previously been shown to host efficient SPEs, which are attributed to deep energy levels within the large bandgap of the material, in a configuration that is similar to extensively investigated color centers in diamond. Antibunched emission from defect centers within gallium nitride and aluminum nitride (AlN) have been recently demonstrated. While such emitters are particularly interesting due to the compatibility of III-nitrides with cleanroom processes, the nature of such defects and the optimal conditions for forming them are not fully understood. Here, we investigate Al implantation on a commercial AlN epilayer through subsequent steps of thermal annealing and confocal microscopy measurements. We observe a fluence-dependent increase in the density of the emitters, resulting in the creation of ensembles at the maximum implantation fluence. Annealing at 600 C results in the optimal yield in SPEs formation at the maximum fluence, while a significant reduction in SPE density is observed at lower fluences. These findings suggest that the mechanism of vacancy formation plays a key role in the creation of the emitters and open enticing perspectives in the defect engineering of SPEs in solid state.

Fabrication of quantum emitters in aluminum nitride by Al-ion implantation and thermal annealing

Nieto Hernandez, E.
First
;
Pugliese, V.;Aprà, P.;Ditalia Tchernij, S.;Olivero, P.;Forneris, J.
Last
2024-01-01

Abstract

Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III-nitrides have previously been shown to host efficient SPEs, which are attributed to deep energy levels within the large bandgap of the material, in a configuration that is similar to extensively investigated color centers in diamond. Antibunched emission from defect centers within gallium nitride and aluminum nitride (AlN) have been recently demonstrated. While such emitters are particularly interesting due to the compatibility of III-nitrides with cleanroom processes, the nature of such defects and the optimal conditions for forming them are not fully understood. Here, we investigate Al implantation on a commercial AlN epilayer through subsequent steps of thermal annealing and confocal microscopy measurements. We observe a fluence-dependent increase in the density of the emitters, resulting in the creation of ensembles at the maximum implantation fluence. Annealing at 600 C results in the optimal yield in SPEs formation at the maximum fluence, while a significant reduction in SPE density is observed at lower fluences. These findings suggest that the mechanism of vacancy formation plays a key role in the creation of the emitters and open enticing perspectives in the defect engineering of SPEs in solid state.
2024
Inglese
Esperti anonimi
124
124003
1
9
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https://watermark.silverchair.com/124003_1_5.0185534.pdf?token=AQECAHi208BE49Ooan9kkhW_Ercy7Dm3ZL_9Cf3qfKAc485ysgAABYYwggWCBgkqhkiG9w0BBwagggVzMIIFbwIBADCCBWgGCSqGSIb3DQEHATAeBglghkgBZQMEAS4wEQQM2gWvoaSErdEtu32qAgEQgIIFOXq4lC3EIzgEt_9-MwMCW10tne4E7zwm-iV88PGvDdNphg0csWabCF8MFFpezuIWmkGJqixahqwnOth2mO8FzLj3B63EPvUIb4HN_x1j7eedSy857gRhO0YU3qG8QFxef4ZTJShmNhHyAc6CcLTN8Yom9u8N9_6QHYZITG-eeNT2mrHrzgIFbD84eG9rpEhvWk9cyFXufxbO0enrOgnCR4bW80I1LUJk-l3qX6_JnGFHeJ1nimi0I-k6cTLQKK-OzcnqNe5GnBacUv32pXH7VjUHAi5wuHOwwbeP7NH4v4lmxGR0X-nabzJoSEzdqsiyDNWgEuA9vOawb3OBaSRjmgu6ExZUHMNg1BIfGXKLNFIWCk-fVavsWY60_TbEdwMhP2mebSARYqlTlmGIxZlguFijjGCFRmj8ZhnB1Im3mMhtM-kAq6xlDxUXze5yN3wsqSPZqBqrcbIkyHwrXyGOnXB2VBTtsDqTwqKSi9sweGqI-AEpx1axfKUOLP0lu0wuVEsT7XuNh6IGyw8YKtcfiVbzqLT32IIRUccLK1X1ci11yyLuvG8QN5HA4e6ZAReYztmxBlVAfi4VkkXqOaXOoQhybadTyPPjSkg-HblYQfJRupo9NTYQpSMZEVQ-rxHKZzeIh9kLIHBXUQSF3XQN8xFGWGKBiSokEE047L2QdwtWhhaj5BEkQNx6IoxMqyqyeCTyPmwAbmsuLpJTMJZabYPxR3DIk5pw_xlob-GmK7gWqg4FJaQbeZHJ75Gdw-nuLr7_PNv0WMHaPsrUp7sujV-dU99ETHfRK2-Z_M1-rnCfKBOEW5zhjA1PVRWQ2K6F323qkf95Mkax7zqwgn9JbNn9BSUaoMW9Thcb36ukvtSUTlw4U6fpRiHC-xk11tBMcbvk_Z6fcNtlR7hDH8yx5McUP43NGhmGb9aGUBTsO3GM6RHuIaWa0SrlzN90eWcYslQqbP5TPUJXPX6JmTHDLpB5xTWHMiQV_s0daXkDWGqXEV-kNnUJxlvGxo4_AfH0GnuCbOpnMO8IeKso6hO5ouJ-OGytZCADJbOMGF6nKtO7D2KgxQDF3BS7tWU2rMeuXZcjEQ-DR6FR7Es2rw2Mo5fkE6JY89UhzjxCYjnYuZHbtuT93CmLtjRiakJ9DXihw82wSMYBiXeZWe1J4mzlzNeCejzzvdhPnoQ-AeLIZWMcFotdIGn0nkuejfH_fOHCyukLmc4psTlFq-OZtogrCECyA66EyPQg6FHV5sBzJjBpEUbWJ4ahB6Lclw2FiuqDmYGu_Nw2AZXQzgD_xfubpriYclpvVfoqcbm3jPbb7C8DWzl-znLMSW-RXT_1bPfHKhx2YvgJp0IF2iwUkTcs1ZqE7fg8DE932G5fioVBRVCNfu8lX_CCDcUgJEE9x8DISq5uA1mW1GXMJ6wW4TaiHHncSeUYHt-tevSVnPFxL2KkQWb-5KW-ET_d1W0bZaficuRxlkIbxP0HShc505yZtANXRMG_2DLWvTBMlCQ_AT1w-3hj_5SsRcPlgiUrM8rWn8GilyIP9chvfS0llJjO4rlzSoNTAmZlxpzrloYVe5IJiibfj1p5yo7s9GhWtoD7rnE541W9BlL8VtgheVXK4knDfFLb_FgFMNO_cETsLy1KUxUx7ZNAI7_aEow7PymobqoP55BsuQDbAyFtqnWqZg1d0SUvNjPjk5YlOV-0bGt-8Jo9zBRxYDETf7FDL8efuHz7ErKqFBzeK9IwzSVFDineZc4NrNjUDAW-59iNt5cakUD5Ybp-K6F3
Semiconductors, Confocal microscopy, Crystallographic defects, Annealing, Ion implantation, Optical properties, Photoluminescence spectroscopy, Photons, Nitrides, Photoemission
REGNO UNITO DI GRAN BRETAGNA
   OLIVERO P. - Prog. UE n. 956387 - H2020-MSCA-ITN-2020 - "LasIonDef - Training on laser fabrication and ion implantation of defects as quantum emitters"
   LasIonDef
   EUROPEAN COMMISSION
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   FORNERIS J. - "QADET: Quantum Sensors for Metrology Based on Single-Atom-Like Device Technology" - 20IND05 - Cdd 10/06/2021
   QADeT
   EUROPEAN COMMISSION
   H2020
   20IND05

   OLIVERO P. - "POLIGHT: Pushing bOundaries of nano-dimensional metrology by Light" - 20FUN02 - Cdd 10/06/2021
   POLight
   EUROPEAN COMMISSION
   H2020
   20FUN02

   Compagnia di San Paolo - Bando ex-post - Anno 2020 - "Deterministic Fabrication of Fock State Sources" - Cda 21/12/2021
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   COMPAGNIA DI SAN PAOLO
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   OLIVERO P. - FISR 2019 - "Intelligent fabrication of QUANTum devices in DIAmond by Laser and Ion Irradiation"
   QuantDia
   MINISTERO DELL'ISTRUZIONE, DELL'UNIVERSITA' E DELLA RICERCA
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Nieto Hernandez, E.; Yağcı, H. B.; Pugliese, V.; Aprà, P.; Cannon, J. K.; Bishop, S. G.; Hadden, J.; Ditalia Tchernij, S.; Olivero, P.; Bennett, A. J....espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/1962930
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