Recent demonstrations of optically active telecom emitters show that silicon is a compelling candidate for solid-state quantum photonic platforms. In particular, the fabrication of a defect known as the G center has been shown in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer scale still requires the identification of a suitable thermodynamic pathway enabling its activation following ion implantation. Here we demonstrate the activation of G centers in high-purity silicon substrates upon nanosecond pulsed laser annealing. The proposed method enables non-invasive, localized activation of G centers by the supply of short non-stationary pulses, thus overcoming the limitations of conventional rapid thermal annealing related to the structural metastability of the emitters. A finite-element analysis highlights the strong non-stationarity of the technique, offering radically different defect-engineering capabilities with respect to conventional longer thermal treatments, paving the way to the direct and controlled fabrication of emitters embedded in integrated photonic circuits and waveguides.

Activation of telecom emitters in silicon upon ion implantation and ns pulsed laser annealing

Andrini, Greta;Zanelli, Gabriele;Ditalia Tchernij, Sviatoslav;Corte, Emilio;Nieto Hernandez, Elena;Verna, Alessio;Bernardi, Ettore;Virzì, Salvatore;Traina, Paolo;Olivero, Paolo;Forneris, Jacopo
2024-01-01

Abstract

Recent demonstrations of optically active telecom emitters show that silicon is a compelling candidate for solid-state quantum photonic platforms. In particular, the fabrication of a defect known as the G center has been shown in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer scale still requires the identification of a suitable thermodynamic pathway enabling its activation following ion implantation. Here we demonstrate the activation of G centers in high-purity silicon substrates upon nanosecond pulsed laser annealing. The proposed method enables non-invasive, localized activation of G centers by the supply of short non-stationary pulses, thus overcoming the limitations of conventional rapid thermal annealing related to the structural metastability of the emitters. A finite-element analysis highlights the strong non-stationarity of the technique, offering radically different defect-engineering capabilities with respect to conventional longer thermal treatments, paving the way to the direct and controlled fabrication of emitters embedded in integrated photonic circuits and waveguides.
2024
5
1
1
7
https://www.google.com/url?q=https://www.nature.com/articles/s43246-024-00486-4.pdf&source=gmail-imap&ust=1713027038000000&usg=AOvVaw0G7fOkchw9_XMmHG4Bnj7D
Silicon, color centers, ion implantation, laser annealing, annealing
Andrini, Greta; Zanelli, Gabriele; Ditalia Tchernij, Sviatoslav; Corte, Emilio; Nieto Hernandez, Elena; Verna, Alessio; Cocuzza, Matteo; Bernardi, Ettore; Virzì, Salvatore; Traina, Paolo; Degiovanni, Ivo P.; Genovese, Marco; Olivero, Paolo; Forneris, Jacopo
File in questo prodotto:
File Dimensione Formato  
s43246-024-00486-4.pdf

Accesso aperto

Tipo di file: PDF EDITORIALE
Dimensione 1.34 MB
Formato Adobe PDF
1.34 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/1969190
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? 0
social impact