Activation of telecom emitters in silicon upon ion implantation and ns pulsed laser annealing

Recent demonstrations of optically active telecom emitters show that silicon is a compelling candidate for solid-state quantum photonic platforms. In particular, the fabrication of a defect known as the G center has been shown in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer scale still requires the identification of a suitable thermodynamic pathway enabling its activation following ion implantation. Here we demonstrate the activation of G centers in high-purity silicon substrates upon nanosecond pulsed laser annealing. The proposed method enables non-invasive, localized activation of G centers by the supply of short non-stationary pulses, thus overcoming the limitations of conventional rapid thermal annealing related to the structural metastability of the emitters. A finite-element analysis highlights the strong non-stationarity of the technique, offering radically different defect-engineering capabilities with respect to conventional longer thermal treatments, paving the way to the direct and controlled fabrication of emitters embedded in integrated photonic circuits and waveguides.