In the present work we focus on the investigation by electron spin resonance (EPR) and complementary techniques (such as SEM, ToF-SIMS, XPS) of silicon nanowires produced by metal-assisted chemical etching (MACE). In particular we will report on the impact of the MACE process on the donors (P and As) and on surface passivation processes based on H or S. The efficiency of the passivation processes has been monitored by following the EPR signals of the Pb centers at the Si/SiO2 interface.
Silicon nanowires: Donors, surfaces and interface defects
FANCIULLI, MARCO
First
;
2016-01-01
Abstract
In the present work we focus on the investigation by electron spin resonance (EPR) and complementary techniques (such as SEM, ToF-SIMS, XPS) of silicon nanowires produced by metal-assisted chemical etching (MACE). In particular we will report on the impact of the MACE process on the donors (P and As) and on surface passivation processes based on H or S. The efficiency of the passivation processes has been monitored by following the EPR signals of the Pb centers at the Si/SiO2 interface.
File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
Fanciulli_2016_ECS_Trans._75_179.pdf
Accesso riservato
Tipo di file:
PDF EDITORIALE
Dimensione
456.28 kB
Formato
Adobe PDF
|
456.28 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
