Photoactivation of group-IV color centers in ion-implanted diamond using continuous-wave laser irradiation

Group-IV color centers in diamond are promising solid-state quantum emitters due to their favorable optical properties, yet deterministic fabrication via ion implantation remains challenging. We investigated the photoactivation of Si-, Ge-, Sn-, and Pb-implanted diamond using continuous-wave (CW) 405 nm laser irradiation at milliwatt powers. The photoactivation follows a characteristic energy dependence consistent with charge state transitions induced by photon absorption. Notably, the PbV− center demonstrated a photoactivation yield of approximately 0.4%, suggesting a viable route for spatially controlled fabrication of single quantum emitters.