The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the average number of active electrical traps generated by a single ion, which can be profitably used to estimate the radiation hardness of the material.

Study of ion induced damage in 4H-SiC

LO GIUDICE, Alessandro;OLIVERO, Paolo;MANFREDOTTI, Claudio;VITTONE, Ettore;
2005-01-01

Abstract

The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the average number of active electrical traps generated by a single ion, which can be profitably used to estimate the radiation hardness of the material.
Silicon Carbide and Related Materials 2004
Trans Tech Publications
483-485
389
392
978-0-87849-963-2
4H silicon carbide; Ion beam induced charge collection; radiation damage
A. LO GIUDICE; P. OLIVERO; F. FIZZOTTI; C. MANFREDOTTI; E. VITTONE; S. BIANCO; G. BERTUCCIO; R. CASIRAGHI; M. JAKSIC
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/38469
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