An analysis of the charge collection process induced by focused MeV ion beams in semiconductor devices is presented. It is based on the extended Shockley - Ramo theorem that provides a rigorous mathematical tool for the calculation of the induced charge and current under the assumption of a quasi-steady-state operation of the semiconductor device. A complete description of the theory and underlying assumption is given as well as a simple application of the method aimed to evaluate the main transport properties of fully depleted semiconductors from the analysis of frontal and lateral IBICC measurements.
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