Ion beam induced charge collection measurements have been performed on an epitaxial 4H–SiC Schottky diode with a focussed 1.5 MeV H beam in the temperature range of 120–380 K. The experimental procedure consisted in measuring the charge collection efficiency (CCE) at different bias voltages (V) for each fixed temperature. The CCE versus V curves were analyzed in terms of the Schockley–Ramo–Gunn theory and the minority carrier (hole) diffusion length was obtained as a function of temperature.

Temperature dependent IBIC study of 4H-SiC Schottky diodes

VITTONE, Ettore;OLIVERO, Paolo;MANFREDOTTI, Claudio;LO GIUDICE, Alessandro;
2005-01-01

Abstract

Ion beam induced charge collection measurements have been performed on an epitaxial 4H–SiC Schottky diode with a focussed 1.5 MeV H beam in the temperature range of 120–380 K. The experimental procedure consisted in measuring the charge collection efficiency (CCE) at different bias voltages (V) for each fixed temperature. The CCE versus V curves were analyzed in terms of the Schockley–Ramo–Gunn theory and the minority carrier (hole) diffusion length was obtained as a function of temperature.
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http://www.sciencedirect.com/science/article/pii/S0168583X05001266
4H–SiC Schottky diodes; Temperature dependent ion beam induced charge collection; Ramo's theorem
E. VITTONE; V. RIGATO; P. OLIVERO; F. NAVA; C. MANFREDOTTI; A. LO GIUDICE; Y. GARINO; F. FIZZOTTI
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/39214
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