The acronym IBIC (ion beam induced charge) was coined in the early 1990s to indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic properties of semiconductor materials and devices. Since then, IBIC has become a widespread analytical technique to characterize materials for electronics or for radiation detection, as testified by more than 200 papers published so far in peer-reviewed journals. Its success stems from the valuable information IBIC can provide on charge transport phenomena occurring in finished devices, not easily obtainable by other analytical techniques. However, IBIC analysis requires a robust theoretical background to correctly interpret experimental data. In order to illustrate the importance of using a rigorous mathematical formalism, we present in this paper a benchmark IBIC experiment aimed to test the validity of the interpretative model based on the Gunn's theorem and to provide an example of the analytical capability of IBIC to characterize semiconductor devices. (C) 2008 Elsevier B.V. All rights reserved.

Semiconductor characterization by scanning ion beam induced charge (IBIC) microscopy

VITTONE, Ettore;OLIVERO, Paolo;MANFREDOTTI, Claudio;LO GIUDICE, Alessandro;COLOMBO, Elisabetta
2008-01-01

Abstract

The acronym IBIC (ion beam induced charge) was coined in the early 1990s to indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic properties of semiconductor materials and devices. Since then, IBIC has become a widespread analytical technique to characterize materials for electronics or for radiation detection, as testified by more than 200 papers published so far in peer-reviewed journals. Its success stems from the valuable information IBIC can provide on charge transport phenomena occurring in finished devices, not easily obtainable by other analytical techniques. However, IBIC analysis requires a robust theoretical background to correctly interpret experimental data. In order to illustrate the importance of using a rigorous mathematical formalism, we present in this paper a benchmark IBIC experiment aimed to test the validity of the interpretative model based on the Gunn's theorem and to provide an example of the analytical capability of IBIC to characterize semiconductor devices. (C) 2008 Elsevier B.V. All rights reserved.
2008
266
1312
1318
http://www.sciencedirect.com/science/article/pii/S0168583X07018198
Semiconductors; Electronic properties; Ion beam induced charge
E. Vittone; Z. Pastuovic; P. Olivero; C. Manfredotti; M. Jaksic; A. Lo Giudice; F. Fizzotti; E. Colombo
File in questo prodotto:
File Dimensione Formato  
NIMB_266_1312.pdf

Accesso riservato

Descrizione: NIMB_266_1312
Tipo di file: PDF EDITORIALE
Dimensione 939.36 kB
Formato Adobe PDF
939.36 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
IBA2007_Vittone_with_figures_4aperto.pdf

Open Access dal 02/01/2010

Descrizione: IBA2007_Vittone_with_figures_4aperto
Tipo di file: POSTPRINT (VERSIONE FINALE DELL’AUTORE)
Dimensione 831.83 kB
Formato Adobe PDF
831.83 kB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/44542
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 21
  • ???jsp.display-item.citation.isi??? 20
social impact