The surface absorption of ammonia on Boron doped porous silicon (an insulator) entails the generation of conduction electrons which are revealed by CEPR (Conduction Electron Spin Resonance). The phenomenon is fully reversible.

Reversible insulator-to-metal transition in p+-type mesoporous silicon induced by the adsorption of ammonia

CHIESA, Mario;GIAMELLO, Elio
2003-01-01

Abstract

The surface absorption of ammonia on Boron doped porous silicon (an insulator) entails the generation of conduction electrons which are revealed by CEPR (Conduction Electron Spin Resonance). The phenomenon is fully reversible.
2003
42
5031
5035
ELECTRON-SPIN RESONANCE; CONDUCTION-BAND ELECTRONS; POROUS SILICON; PARAMAGNETIC-RESONANCE; ABSORPTION; CENTERS; WAFERS
CHIESA M.; AMATO G.; BOARINO L.; GEOBALDO F.; GARRONE E.; E. GIAMELLO
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/6128
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