As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-channels as a function of several implantation conditions, namely: ion species and energy, implantation fluence. The current-voltage (IV) characteristics of the buried channels were measured at room temperature with a two point probe station. Significant parameters such as the sheet resistance and the characteristic exponent (a) of the IV power-law trend were expressed as a function of damage density, with satisfactory compatibility between the results obtained in different implantation conditions.

Formation of buried conductive micro-channels in single crystal diamond with MeV C and He implantation

PICOLLO, Federico;OLIVERO, Paolo;LO GIUDICE, Alessandro;VITTONE, Ettore
2010-01-01

Abstract

As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-channels as a function of several implantation conditions, namely: ion species and energy, implantation fluence. The current-voltage (IV) characteristics of the buried channels were measured at room temperature with a two point probe station. Significant parameters such as the sheet resistance and the characteristic exponent (a) of the IV power-law trend were expressed as a function of damage density, with satisfactory compatibility between the results obtained in different implantation conditions.
19
5-6
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469
http://www.sciencedirect.com/science/article/pii/S0925963510000142
Diamond crystal; Ion implantation; Electrical conductivity
F. Picollo; P. Olivero; F. Bellotti; Z. Pastuovic; N. Skukan; A. Lo Giudice; G. Amato; M. Jaksic; E. Vittone
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/70531
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