High-purity InGaAs LPE layers with an area of 16×18 mm2 were grown in a conventional leak-tight, oil-free LPE growth system. Carrier concentrations as low as 4.4×10^(14) atoms/cm3 and 300 K mobilites up to 11,300 cm2/ Vs were routinely obtained by simply baking the growth solution in a hydrogen atmosphere at 700°C for 40–60 h. Analysis techniques identified the predominant impurities as sulphur and carbon. The effect of these impurities upon the electrical characteristics of the grown layers has been pointed out.
Growth of high purity InGaAs layers and their characterization
LAMBERTI, Carlo;
1990-01-01
Abstract
High-purity InGaAs LPE layers with an area of 16×18 mm2 were grown in a conventional leak-tight, oil-free LPE growth system. Carrier concentrations as low as 4.4×10^(14) atoms/cm3 and 300 K mobilites up to 11,300 cm2/ Vs were routinely obtained by simply baking the growth solution in a hydrogen atmosphere at 700°C for 40–60 h. Analysis techniques identified the predominant impurities as sulphur and carbon. The effect of these impurities upon the electrical characteristics of the grown layers has been pointed out.
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