This Letter reports about the characterization of a homoepitaxial CVD diamond detector with Ion Beam Induced Charge (IBIC) microscopy in lateral geometry. 100% charge collection efficiency is measured from the active region of the device, while the technique allows a direct mapping with micrometric resolution of the charge collection efficiency profile at different bias voltages from the frontal Schottky electrode to the back ohmic contact, effectively elucidating the roles of drift and diffusion processes in the mechanisms that lead to the formation of the signal.

Lateral IBIC characterization of single crystal synthetic diamond detectors

LO GIUDICE, Alessandro;OLIVERO, Paolo;MANFREDOTTI, Claudio;PICOLLO, FEDERICO;RE, ALESSANDRO;VITTONE, Ettore
2011-01-01

Abstract

This Letter reports about the characterization of a homoepitaxial CVD diamond detector with Ion Beam Induced Charge (IBIC) microscopy in lateral geometry. 100% charge collection efficiency is measured from the active region of the device, while the technique allows a direct mapping with micrometric resolution of the charge collection efficiency profile at different bias voltages from the frontal Schottky electrode to the back ohmic contact, effectively elucidating the roles of drift and diffusion processes in the mechanisms that lead to the formation of the signal.
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A. Lo Giudice; P. Olivero; C. Manfredotti; M. Marinelli; E. Milani; F. Picollo; G. Prestopino; A. Re; V. Rigato; C. Verona; G. Verona-Rinati; E. Vittone
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/87278
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