The positive ion chemistry occurring in SiH4/GeF4 gaseous mixtures was investigated by ion trap mass spectrometry and ab initio theoretical calculations. The GeF3+ cation, the only fragment obtained from ionized GeF4, resulted unreactive toward SiH4. All the primary ions SiHn+ (n = 0–3) react instead with GeF4 so to form SiF+ or SiH2F+. The latter species reacts in turn with SiH4 and GeF4 so to form SiH3+ and SiHF2+, respectively. The potential energy profiles conceivably involved in these reactions were investigated by ab initio calculations performed at the MP2 and coupled cluster (CCSD(T)) level of theory.
Positive ion chemistry of SiH4/GeF4 gaseous misture studied by ion trap mass spectrometry and ab initio calculations.
OPERTI, Lorenza;RABEZZANA, Roberto;TURCO, Francesca;
2011-01-01
Abstract
The positive ion chemistry occurring in SiH4/GeF4 gaseous mixtures was investigated by ion trap mass spectrometry and ab initio theoretical calculations. The GeF3+ cation, the only fragment obtained from ionized GeF4, resulted unreactive toward SiH4. All the primary ions SiHn+ (n = 0–3) react instead with GeF4 so to form SiF+ or SiH2F+. The latter species reacts in turn with SiH4 and GeF4 so to form SiH3+ and SiHF2+, respectively. The potential energy profiles conceivably involved in these reactions were investigated by ab initio calculations performed at the MP2 and coupled cluster (CCSD(T)) level of theory.File in questo prodotto:
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