During operation of the multiplicity detector in the NA50 experiment the single sided AC-coupled p-on-n silicon strip detectors were exposed to charged particle fluences up to 1014 eq n/cm2 and ionising doses up to 20 Mrad, with a very non-uniform radiation spatial distribution. Radiation effects in the detectors observed during the ’96 lead ion run as well as results of the post-run measurements are presented in this paper
Radiation damage of silicon strip detectors in the NA50 experiment
BEOLE', Stefania;MASERA, Massimo;
1998-01-01
Abstract
During operation of the multiplicity detector in the NA50 experiment the single sided AC-coupled p-on-n silicon strip detectors were exposed to charged particle fluences up to 1014 eq n/cm2 and ionising doses up to 20 Mrad, with a very non-uniform radiation spatial distribution. Radiation effects in the detectors observed during the ’96 lead ion run as well as results of the post-run measurements are presented in this paper
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