During operation of the multiplicity detector in the NA50 experiment the single sided AC-coupled p-on-n silicon strip detectors were exposed to charged particle fluences up to 1014 eq n/cm2 and ionising doses up to 20 Mrad, with a very non-uniform radiation spatial distribution. Radiation effects in the detectors observed during the ’96 lead ion run as well as results of the post-run measurements are presented in this paper

Radiation damage of silicon strip detectors in the NA50 experiment

BEOLE', Stefania;MASERA, Massimo;
1998-01-01

Abstract

During operation of the multiplicity detector in the NA50 experiment the single sided AC-coupled p-on-n silicon strip detectors were exposed to charged particle fluences up to 1014 eq n/cm2 and ionising doses up to 20 Mrad, with a very non-uniform radiation spatial distribution. Radiation effects in the detectors observed during the ’96 lead ion run as well as results of the post-run measurements are presented in this paper
8th Vienna Wire Chamber Conference (WCC 98)
Vienna, Austria
23-27 Feb 1998
419
556
569
B. Alessandro;S. Beolé;G. Bonazzola;E. Crescio;W. Dabrowski;P. Giubellino;P. Grybos;M. Idzik;M. Martinetto;A. Marzari-Chiesa;M. Masera;F. Prino;L. Ramello;P.R. Mendes;L. Riccati;M. Sitta
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/107763
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