Silicon carbide has recently emerged as an attractive material for ionization radiation detection [1]. The high band gap and high radiation damage resistance allows the fabrication of detectors capable to operate at high temperature and in high radiation fields. The development of SiC radiation detectors imposes severe constraints in the electronic quality and in homogeneity of the material. A unique method [2] to asses the uniformity of the detector response is IBICC (Ion Beam Induced Charge Collection), which consists in measuring the charge induced at the electrodes by the movement of the charge carriers generated by high energy ions which are suitably focused in the frontal electrode and deflected in order to raster the electrode surface. This work presents an investigation of the chargecollection properties of a 4H-SiC Schottky diode performed by means of IBICC. Pulse height spectra relevant to different proton energies were obtained using a fixed reverse bias (-40 V) which corresponds to a depletion layer width of about 4.5 ?m. These results were interpreted assuming a complete charge collection generated by ionization in the depletion region (DR) and the injection into DR by diffusion of minority carriers generated in the neutral region. From the analysis of the IBICC spectra obtained at different proton energies from 0.7 to 1.7 MeV, we obtained a value of hole diffusion length Lp = 8.4 ?m. IBICC maps were obtained by recording the mean pulse height as a function of the ion impact co-ordinates at different ion energies. The uniformity of the charge collection maps decreases as the ion energy increases, i.e. as the ion energy loss occurs deeper in the neutral region. This fact reflects the presence of defects throughout the whole volume studied.

Characterisation of epitaxial SiC charge particle detectors by the Ion Beam Induced Charge Collection (IBICC) technique.

VITTONE, Ettore;MANFREDOTTI, Claudio;LO GIUDICE, Alessandro;OLIVERO, Paolo;
2002-01-01

Abstract

Silicon carbide has recently emerged as an attractive material for ionization radiation detection [1]. The high band gap and high radiation damage resistance allows the fabrication of detectors capable to operate at high temperature and in high radiation fields. The development of SiC radiation detectors imposes severe constraints in the electronic quality and in homogeneity of the material. A unique method [2] to asses the uniformity of the detector response is IBICC (Ion Beam Induced Charge Collection), which consists in measuring the charge induced at the electrodes by the movement of the charge carriers generated by high energy ions which are suitably focused in the frontal electrode and deflected in order to raster the electrode surface. This work presents an investigation of the chargecollection properties of a 4H-SiC Schottky diode performed by means of IBICC. Pulse height spectra relevant to different proton energies were obtained using a fixed reverse bias (-40 V) which corresponds to a depletion layer width of about 4.5 ?m. These results were interpreted assuming a complete charge collection generated by ionization in the depletion region (DR) and the injection into DR by diffusion of minority carriers generated in the neutral region. From the analysis of the IBICC spectra obtained at different proton energies from 0.7 to 1.7 MeV, we obtained a value of hole diffusion length Lp = 8.4 ?m. IBICC maps were obtained by recording the mean pulse height as a function of the ion impact co-ordinates at different ion energies. The uniformity of the charge collection maps decreases as the ion energy increases, i.e. as the ion energy loss occurs deeper in the neutral region. This fact reflects the presence of defects throughout the whole volume studied.
II WORKSHOP SiC
parma
18-19 Marzo 2002
II WORKSHOP SiC, 18-19 Marzo, 2002, CNR-MASPEC, Parma
CNR-MASPEC
0
3
silicon carbide; IBIC
E. VITTONE; C.MANFREDOTTI; A. LO GIUDICE; C. PAOLINI; P.OLIVERO; F.NAVA; M.JAKSIC
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/108444
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