Superconducting tunnel junctions are promising as radiation detectors because of their larger energy resolution with respect to conventional Si-based detectors. We have developed a fabrication process for Nb-based STJ devices which allows to fabricate junctions with leakage currents well below 50 pA at 300 mK, a factor of 10-6 less than the leakage current at 4.2 K. The junctions are diamond-shaped with areas between 20 × 20 and 100 × 100 μm2. We report the details of the fabrication process, together with an analysis of the structure of films by AFM, SEM and x-ray spectroscopy. We show the measured I - V curves at 300 mK, together with preliminary results on x-ray measurements at 300 mK with a 5 mC 55Fe source. © 2007 IEEE.

Superconducting tunnel junction X-ray detectors with ultra-low subgap current

AGOSTINO, Angelo;
2007-01-01

Abstract

Superconducting tunnel junctions are promising as radiation detectors because of their larger energy resolution with respect to conventional Si-based detectors. We have developed a fabrication process for Nb-based STJ devices which allows to fabricate junctions with leakage currents well below 50 pA at 300 mK, a factor of 10-6 less than the leakage current at 4.2 K. The junctions are diamond-shaped with areas between 20 × 20 and 100 × 100 μm2. We report the details of the fabrication process, together with an analysis of the structure of films by AFM, SEM and x-ray spectroscopy. We show the measured I - V curves at 300 mK, together with preliminary results on x-ray measurements at 300 mK with a 5 mC 55Fe source. © 2007 IEEE.
2007
2nd IEEE International Workshop on Advances in Sensors and Interfaces, IWASI
Bari
26 June 2007 through 27 June 2007
Proceedings of the 2nd IEEE International Workshop on Advances in Sensors and Interfaces, IWASI
Institute of Electrical and Electronics Engineers (IEEE),Components, Packaging and Manufacturing Technology Society (CPMT),Politecnico di Bari
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9781424412457
http://www.scopus.com/inward/record.url?eid=2-s2.0-48249119172&partnerID=40&md5=468221d9d12e68e7d050697cc5776671
Electric conductivity, Leakage currents, Niobium, Optical design, Sensors, Silicon, Superconducting devices, Superconductivity, Tunnel junctions, Tunnels; Energy resolutions, Fabrication processes, Si-based detectors, Superconducting Tunnel Junction, Superconducting tunnel junctions, X-ray detectors; Radiation detectors
S. Maggi;N. D. Leo;M. Fretto;V. Lacquaniti;A. Agostino;P. Verhoeve
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/128559
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