Graphitization of ion-beam induced amorphous layers in diamond has attracted significant interest due to ability to fabricate device structures containing two structural forms of carbon. The graphitic layers can be chemically etched to form free-standing diamond films. In the present work the graphitization process was studied using conventional and analytical transmission electron microscopy (TEM). It was found that annealing at 550 oC results in a partial graphitization of the implanted volume with graphitic phase in the middle of the amorphous layer. Annealing at 1400 oC resulted in complete graphitization of the amorphous layers.
Conventional and analytical electron microscopy study of phase transformation in implanted diamond layers
OLIVERO, Paolo;
2013-01-01
Abstract
Graphitization of ion-beam induced amorphous layers in diamond has attracted significant interest due to ability to fabricate device structures containing two structural forms of carbon. The graphitic layers can be chemically etched to form free-standing diamond films. In the present work the graphitization process was studied using conventional and analytical transmission electron microscopy (TEM). It was found that annealing at 550 oC results in a partial graphitization of the implanted volume with graphitic phase in the middle of the amorphous layer. Annealing at 1400 oC resulted in complete graphitization of the amorphous layers.
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