The ion beam induced charge (IBIC) technique is a valuable technique to study the degradation of the charge collection efficiency (CCE) induced by radiation damage in semiconductor devices. It offers the advantage of providing a wide range of damage levels generated by ions with different masses and energies in different regions of the same sample, and of using the same or different ions to probe the CCE degradation. This paper describes an experimental protocol based on IBIC and the relevant interpretative model, which includes the displacement damage dose approach as a special case and provides a general method to evaluate the effective radiation hardness of a material.

Ion beam induced charge analysis of radiation damage in silicon photodiodes

VITTONE, Ettore
2013-01-01

Abstract

The ion beam induced charge (IBIC) technique is a valuable technique to study the degradation of the charge collection efficiency (CCE) induced by radiation damage in semiconductor devices. It offers the advantage of providing a wide range of damage levels generated by ions with different masses and energies in different regions of the same sample, and of using the same or different ions to probe the CCE degradation. This paper describes an experimental protocol based on IBIC and the relevant interpretative model, which includes the displacement damage dose approach as a special case and provides a general method to evaluate the effective radiation hardness of a material.
SPIE Conference on Micro- and Nanotechnology Sensors, Systems, and Applications V
baltimora (USA)
29/04/2013
SPIE Proceedings Vol. 8725 Micro- and Nanotechnology Sensors, Systems, and Applications V
Thomas George; M. Saif Islam; Achyut K. Dutta
8725
59
69
Focused ion beams; IBIC-ion Beam Induced Charge; Radiation Damage; Silicon diodes
Željko Pastuović; Milko Jaksic; Ettore Vittone
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/141635
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