The breakdown of the Integral Quantum Hall Effect (IQHE) at high current is studied in wide high quality GaAs/AlGaAs heterostructures on the i = 2 and i = 4 Hall plateaux. Pronounced steps in the longitudinal resistance are observed with rich time structures, which are analyzed with different techniques.
Analysis of the breakdown of the IQHE in wide GaAs/AlGaAs heterostructures
ALLASIA, Daniela;RINAUDO, Giuseppina;TRUCCATO, Marco;
1994-01-01
Abstract
The breakdown of the Integral Quantum Hall Effect (IQHE) at high current is studied in wide high quality GaAs/AlGaAs heterostructures on the i = 2 and i = 4 Hall plateaux. Pronounced steps in the longitudinal resistance are observed with rich time structures, which are analyzed with different techniques.
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