Characterization of thin carbonated LGADs after irradiation up to 2.5·10^15 n_(1 Mev eq.)/cm^2

EXFLU1 is a new batch of radiation-resistant silicon sensors manufactured at Fondazione Bruno Kessler (FBK, Italy). The EXFLU1 sensors utilize thin substrates that remain operable even after extensive irradiation. They incorporate Low-Gain Avalanche Diode (LGAD) technology, enabling internal multiplication of charge carriers to boost the small signal produced by a particle crossing their thin active thicknesses, ranging from 15 to 45 μ m. To address current challenges related to acceptor removal, the EXFLU1 production incorporates improved defect engineering techniques. This includes the so called carbonated LGADs, where carbon doping is implanted alongside boron in the gain layer. This contribution focuses on evaluating the performances of thin sensors with carbonated gain layer from the EXFLU1 production, before and after irradiation up to 2.5· 10^15 n_(1 Mev eq.)/cm^2. The conducted tests involve static and transient characterizations, including I-V and C-V measurements, as well as laser and β-source tests. This work aims to present the state of the art in LGAD sensor technology with a carbonated gain layer and shows the characterization of the most radiation-resistant LGAD sensors produced to date.