A new experimental procedure based on the ion beam induced charge collection (IBIC) has been used to characterize semiconductor detectors and devices. It consists in measuring the charge collection efficiency (η) as a function of the angle of incidence (α) of a strongly penetrating MeV ion beam focused onto a partially depleted semiconductor detector. The one-dimensional model, based on the drift-diffusion model derived from the Shockley-Ramo-Gunn’s theorem, gives the theoretical background to fit the η(α) curve and to estimate both the extension of the depletion layer, the dead layer thickness and the minority carrier diffusion length. To illustrate the analytical capability of this technique, a 2 MeV proton beam was focused at different incident angles onto a 4H-SiC Schottky diode.
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