Proton microbeams of energy from 3 to 5 MeV have been used to investigate the cross section of Si, CdTe and CVD diamond samples by recording the charge pulses delivered at the electrodes by the single protons with a charge-sensitive electronic chain. The investigated depth varies from 50 to 140 m m depending on the proton energy and on the material. In the case of an homogeneous material (Si, CdTe), lifetime and mobility values can be obtained, together with the in-depth electrical field profiles. For polycrystalline materials, the maps of collection efficiency can be correlated with morphological maps putting in evidence a columnar-like structure due to the film growth mechanism. In these cases, it is relatively difficult to separate the effects due to the electric field from the carriers transport properties (mobility, lifetime). Anyway, maps of collection length are quite important in order to detect the electrical inhomogeneities of polycrystalline materials.

SCANNING ION BEAM MICROSCOPY: A NEW TOOL FOR MAPPING THE TRANSPORT PROPERTIES OF SEMICONDUCTORS AND INSULATORS

MANFREDOTTI, Claudio;VITTONE, Ettore;
1997-01-01

Abstract

Proton microbeams of energy from 3 to 5 MeV have been used to investigate the cross section of Si, CdTe and CVD diamond samples by recording the charge pulses delivered at the electrodes by the single protons with a charge-sensitive electronic chain. The investigated depth varies from 50 to 140 m m depending on the proton energy and on the material. In the case of an homogeneous material (Si, CdTe), lifetime and mobility values can be obtained, together with the in-depth electrical field profiles. For polycrystalline materials, the maps of collection efficiency can be correlated with morphological maps putting in evidence a columnar-like structure due to the film growth mechanism. In these cases, it is relatively difficult to separate the effects due to the electric field from the carriers transport properties (mobility, lifetime). Anyway, maps of collection length are quite important in order to detect the electrical inhomogeneities of polycrystalline materials.
CAARI 1997
Dentor
1997
CP392, Application of Accelerators in Research and Industry,
CP392, Application of Accelerators in Research and Industry, J.L. Duggan and I.L. Morgan eds., AIP Press
705
708
Ion Beam Induced Charge; semiconductor
CLAUDIO MANFREDOTTI; FRANCO FIZZOTTI; PAOLO POLESELLO; ETTORE VITTONE; MILKO JAKSIC; IVA BOGDANOVIC; V. VALKOVIC
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2318/70441
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