A multi quantum well electroabsorption-modulated laser is a semiconductor device employed in long-distance, high-frequency optical-fibre communication. The most advanced devices involve monolithic integration of two functions, electroabsorption modulator and distributed feedback laser, at the chip level. Devices are manufactured by state-of-the-art methods of substrate masking and vapour deposition, but the results of this process are judged empirically. Here scientists have used an ESRF hard X-ray microprobe to characterise the semiconductor material constituents of such a device with unprecedented detail.

Multi quantum well electroabsorption-modulated laser characterised by hard X-ray microprobe

MINO, LORENZO;GIANOLIO, DIEGO;AGOSTINI, Giovanni;PIOVANO, ANDREA;TRUCCATO, Marco;AGOSTINO, Angelo;CAGLIERO, Stefano;LAMBERTI, Carlo
2010

Abstract

A multi quantum well electroabsorption-modulated laser is a semiconductor device employed in long-distance, high-frequency optical-fibre communication. The most advanced devices involve monolithic integration of two functions, electroabsorption modulator and distributed feedback laser, at the chip level. Devices are manufactured by state-of-the-art methods of substrate masking and vapour deposition, but the results of this process are judged empirically. Here scientists have used an ESRF hard X-ray microprobe to characterise the semiconductor material constituents of such a device with unprecedented detail.
http://www.esrf.eu/news/spotlight/spotlight107/spotlight107/
Selective Area Growth; SAG; MQW; optoelectronics; semiconductor; III-V; epitaxyal growth; laser; modulator; integrated device; microbeam; XRD; photoluminescence; XRF
L. Mino; D. Gianolio; G. Agostini; A. Piovano; M. Truccato; A. Agostino; S. Cagliero; G. Martinez-Criado; S. Codato; C. Lamberti
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2318/77183
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